Germanium detector passivated with hydrogenated amorphous germanium

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865854

Hansen, William L ^[1]; Haller, Eugene E ^[2]

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1. Walnut Creek, CA
2. Berkeley, CA

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4589006
• OSTI ID: 865854
• Country of Publication: United States
• Language: English

Related Subjects

germanium
detector
passivated
hydrogenated
amorphous
passivation
predominantly
crystalline
semiconductor
devices
12
provided
surface
coating
21
sputtered
material
radiation
diode
example
realized
sputtering
etched
quenched
11
pressure
atmosphere
hydrogen
argon
unlike
prior
maintained
vacuum
cryogenic
temperatures
avoid
deterioration
processed
described
manner
stored
air
temperature
otherwise
exposed
variety
environmental
conditions
compensates
pre-existing
undesirable
protecting
device
future
impregnation
impurities
surface coating
cryogenic temperature
cryogenic temperatures
semiconductor material
hydrogenated amorphous
radiation detector
semiconductor device
semiconductor devices
environmental conditions
crystalline semiconductor
amorphous semiconductor
pressure atmosphere
germanium detector
/257/148/204/438/