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Title: Polysilane positive photoresist materials and methods for their use

Abstract

New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
AT&T
OSTI Identifier:
865851
Patent Number(s):
US 4588801
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
polysilane; positive; photoresist; materials; methods; copolymers; comprise; recurring; units; -si; 1-13; carbon; atoms; independently; hydrogen; alkyl; cycloalkyl; phenyl; alkylphenyl; phenylalkyl; proviso; contains; moiety; alkylene; forming; adjoining; atom; 3-13; ethyl; methyl; n-propyl; corresponding; homopolysilanes; provided; ultraviolet; irradiation; photodepolymerize; form; volatile; products; result; represent; photoresists; enable; direct; formation; image; eliminating; heretofore; required; step; resist material; form volatile; carbon atoms; carbon atom; photoresist material; recurring units; ultraviolet irradiation; photoresist materials; comprise recurring; direct formation; heretofore required; positive photoresist; polysilane copolymers; polysilane positive; copolymers comprise; /528/430/999/

Citation Formats

Harrah, Larry A, and Zeigler, John M. Polysilane positive photoresist materials and methods for their use. United States: N. p., 1986. Web.
Harrah, Larry A, & Zeigler, John M. Polysilane positive photoresist materials and methods for their use. United States.
Harrah, Larry A, and Zeigler, John M. 1986. "Polysilane positive photoresist materials and methods for their use". United States. https://www.osti.gov/servlets/purl/865851.
@article{osti_865851,
title = {Polysilane positive photoresist materials and methods for their use},
author = {Harrah, Larry A and Zeigler, John M},
abstractNote = {New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A and B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.},
doi = {},
url = {https://www.osti.gov/biblio/865851}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}