Photodetector with enhanced light absorption
Patent
·
OSTI ID:865537
- Lawrenceville, NJ
A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.
- Research Organization:
- Solar Energy Research Institute
- Assignee:
- RCA Corporation (Princeton, NJ)
- Patent Number(s):
- US 4532537
- OSTI ID:
- 865537
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/257/136/250/
absorption
amorphous
amorphous silicon
cells
comparative
comprising
conducting
conducting layer
conversion
conversion efficiency
detector comprising
detector including
efficiency
electrically
electrically conducting
enhanced
enhanced light
enhancing
fabricating
fifty
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hydrogenated
hydrogenated amorphous
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method
percent
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sno
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textured surface
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transmissive
transmissive electrically
traps
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absorption
amorphous
amorphous silicon
cells
comparative
comprising
conducting
conducting layer
conversion
conversion efficiency
detector comprising
detector including
efficiency
electrically
electrically conducting
enhanced
enhanced light
enhancing
fabricating
fifty
fifty percent
hydrogenated
hydrogenated amorphous
incident
incident light
including
layer
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light transmissive
method
percent
photodetector
photodetector including
semiconductor
silicon
sno
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