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U.S. Department of Energy
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Photodetector with enhanced light absorption

Patent ·
OSTI ID:865537
A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.
Research Organization:
Solar Energy Research Institute
Assignee:
RCA Corporation (Princeton, NJ)
Patent Number(s):
US 4532537
OSTI ID:
865537
Country of Publication:
United States
Language:
English