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Title: Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor

Abstract

An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

Inventors:
 [1]
  1. Lawrenceville, NJ
Publication Date:
OSTI Identifier:
865493
Patent Number(s):
US 4525375
Application Number:
06/479,449
Assignee:
RCA Corporation (New York, NY)
DOE Contract Number:  
ZE-2-020440-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; controllong; deposition; hydrogenated; amorphous; silicon; apparatus; improved; controlled; layer; substrate; means; provided; illumination; coated; surface; measurement; resulting; photovoltage; outermost; coating; admixing; amounts; type; dopants; reactant; gas; response; measured; achieve; desired; level; doping; deposited; desired level; coated surface; improved method; amorphous silicon; hydrogenated amorphous; reactant gas; type dopant; outermost layer; controlled deposition; deposited layer; type dopants; resulting ph; /427/118/136/

Citation Formats

Hanak, Joseph J. Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor. United States: N. p., 1985. Web.
Hanak, Joseph J. Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor. United States.
Hanak, Joseph J. Tue . "Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor". United States. https://www.osti.gov/servlets/purl/865493.
@article{osti_865493,
title = {Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor},
author = {Hanak, Joseph J},
abstractNote = {An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {6}
}

Patent:

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