Method and apparatus for producing high purity silicon

Patent · Sun Jan 01 00:00:00 EST 1984

OSTI ID:865242

Olson, Jerry M ^[1]

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1. Lakewood, CO

A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• DOE Contract Number: EG-77-C-01-4042
• Assignee: United States of America as represented by Department of Energy (Washington, DC)
• Patent Number(s): US 4481232
• OSTI ID: 865242
• Country of Publication: United States
• Language: English

Related Subjects

method
apparatus
producing
purity
silicon
forming
copper
silie
alloy
positioning
enclosure
filament
placed
opposite
filled
chemical
vapor
transport
gas
adapted
transporting
finally
heated
temperatures
sufficient
react
surface
deposit
reacted
addition
carrying
disclosed
transport gas
chemical vapor
alloy surface
purity silicon
vapor transport
temperatures sufficient
/427/118/136/423/