Photocell utilizing a wide-bandgap semiconductor material

Patent · Tue Jun 05 00:00:00 EDT 1984

OSTI ID:865038

Carlson, David E ^[1]; Williams, Brown F ^[2]

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1. Yardley, PA
2. Princeton, NJ

A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

• Research Organization: Solar Energy Research Institute
• DOE Contract Number: XG-0-9372-1
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4453173
• Application Number: 06/372,103
• OSTI ID: 865038
• Country of Publication: United States
• Language: English

Related Subjects

photocell
utilizing
wide-bandgap
semiconductor
material
comprises
p-i-n
amorphous
silicon
structure
wide
bandgap
layer
adjacent
p-type
n-type
reduces
absorption
light
entering
back-diffusion
minority
carriers
wide band
cell utilizing
wide bandgap
cell comprises
amorphous silicon
semiconductor material
minority carrier
minority carriers
n-type layer
silicon structure
layer adjacent
light entering
/257/136/