Thin film photovoltaic device with multilayer substrate

Patent · Sun Jan 01 00:00:00 EST 1984

OSTI ID:864966

Catalano, Anthony W ^[1]; Bhushan, Manjul ^[2]

---

1. Rushland, PA
2. Wilmington, DE

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• DOE Contract Number: EG-77-C-01-4042
• Assignee: University of Delaware (Newark, DE)
• Patent Number(s): US 4443653
• OSTI ID: 864966
• Country of Publication: United States
• Language: English

Related Subjects

film
photovoltaic
device
multilayer
substrate
utilizes
compound
semiconductor
layer
chosen
iib
va
periodic
table
formed
lowermost
support
layers
additionally
uppermost
carbide
silicon
adjacent
below
metal
conductivity
expansion
coefficient
equal
slightly
expansion coefficient
silicon layer
metal layer
photovoltaic device
semiconductor layer
film photovoltaic
compound semiconductor
periodic table
support layer
multilayer substrate
/136/257/427/438/