Modified laser-annealing process for improving the quality of electrical P-N junctions and devices
- Oak Ridge, TN
- Farragut, TN
The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- W-7405-ENG-26
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4436557
- OSTI ID:
- 864910
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
laser-annealing
process
improving
quality
electrical
p-n
junctions
devices
producing
improved
electrical-junction
applicable
example
light-sensitive
device
produced
providing
crystalline
semiconductor
material
doped
surface
layer
irradiating
laser
pulse
effect
melting
permitting
recrystallization
melted
resulting
contacts
accordance
fill-factor
open-circuit-voltage
parameters
increased
conducting
irradiation
substrate
selected
elevated
temperature
reduction
rate
insufficient
substantial
migration
impurities
silicon
substrates
heated
range
200
degree
500
p-n junctions
silicon substrates
electrical contacts
p-n junction
electrical contact
laser pulse
semiconductor material
elevated temperature
silicon substrate
surface layer
improved electrical
doped silicon
crystalline semiconductor
annealing process
producing improved
junction device
junction devices
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