Method of making coherent multilayer crystals

Patent · Sun Jan 01 00:00:00 EST 1984

OSTI ID:864864

Schuller, Ivan K ^[1]; Falco, Charles M ^[1]

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1. Woodridge, IL

A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4430183
• OSTI ID: 864864
• Country of Publication: United States
• Language: English

Related Subjects

method
coherent
multilayer
crystals
material
consisting
crystal
elements
layer
composed
single
element
vary
thickness
ang
2500
prepared
sputter
deposition
conditions
slow
sputtered
atoms
near
substrate
temperatures
contact
material consisting
single element
sputter deposition
substrate temperature
multilayer crystals
substrate temperatures
coherent multilayer
rate temperature
sputtered atoms
sputter deposit
multilayer crystal
/204/117/505/