Hybrid method of making an amorphous silicon P-I-N semiconductor device

Patent · Tue Oct 04 00:00:00 EDT 1983

OSTI ID:864719

Moustakas, Theodore D ^[1]; Morel, Don L ^[2]; Abeles, Benjamin ^[3]

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1. Berkeley Heights, NJ
2. Woodland Hills, CA
3. Princeton, NJ

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

• DOE Contract Number: XZ-0-9219
• Assignee: Exxon Research and Engineering Co. (Florham Park, NJ)
• Patent Number(s): US 4407710
• Application Number: 06/311,546
• OSTI ID: 864719
• Country of Publication: United States
• Language: English

Related Subjects

hybrid
method
amorphous
silicon
p-i-n
semiconductor
device
directed
hydrogenated
glow
discharge
reactive
sputtering
fabrication
advantage
providing
ability
control
optical
band
gap
layers
resulting
increased
photogeneration
charge
carriers
output
reactive sputtering
charge carrier
fabrication method
charge carriers
band gap
amorphous silicon
hydrogenated amorphous
glow discharge
semiconductor device
silicon p-i-n
optical band
/204/136/427/438/