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Title: Copper oxide/N-silicon heterojunction photovoltaic device

Abstract

A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Inventors:
 [1];  [2]
  1. (Morris Plains, NJ)
  2. (New Providence, NJ)
Publication Date:
Research Org.:
EXXON RESEARCH & ENGINEERING
OSTI Identifier:
864412
Patent Number(s):
US 4360702
Assignee:
Exxon Research and Engineering Co. (Florham Park, NJ) OSTI
DOE Contract Number:  
AC02-79ET23047
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
copper; oxide; n-silicon; heterojunction; photovoltaic; device; characteristics; efficiency; solar; cell; comprising; cu; n-si; layer; formed; heating; deposited; oxygen; containing; ambient; efficiency solar; n-silicon heterojunction; oxygen containing; copper oxide; solar cell; photovoltaic device; cell comprising; heterojunction photovoltaic; copper layer; deposited copper; /136/257/427/438/

Citation Formats

Feng, Tom, and Ghosh, Amal K. Copper oxide/N-silicon heterojunction photovoltaic device. United States: N. p., 1982. Web.
Feng, Tom, & Ghosh, Amal K. Copper oxide/N-silicon heterojunction photovoltaic device. United States.
Feng, Tom, and Ghosh, Amal K. Fri . "Copper oxide/N-silicon heterojunction photovoltaic device". United States. https://www.osti.gov/servlets/purl/864412.
@article{osti_864412,
title = {Copper oxide/N-silicon heterojunction photovoltaic device},
author = {Feng, Tom and Ghosh, Amal K.},
abstractNote = {A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1982},
month = {Fri Jan 01 00:00:00 EST 1982}
}

Patent:

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