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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

Abstract

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Inventors:
 [1];  [2]
  1. Bellevue, WA
  2. Seattle, WA
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
864241
Patent Number(s):
US 4335266
Assignee:
Boeing Company (Seattle, WA)
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
methods; forming; thin-film; heterojunction; solar; cells; i-iii-vi; improved; cell; relatively; light-to-electrical; energy; conversion; efficiency; characterized; comprises; p-n; type; formed; semiconductor; layer; comprising; photovoltaic; active; material; selected; chalcopyrite; ternary; materials; vacuum; deposited; composition-graded; ranging; microns; congruent; region; preferably; resistivity; p-type; superimposed; transient; n-type; defining; homojunction; ii; interdiffusion; elemental; constituents; discrete; juxtaposed; regions; causes; government; rights; pursuant; contract; eg-77-c-01-4042; subcontract; xj-9-8021-1; awarded; department; transient p-n; photovoltaic active; p-n homojunction; n-type material; material defining; layer comprising; n-type semiconductor; heterojunction solar; cell comprises; conversion efficiency; active material; electrical energy; solar cell; semiconductor material; solar cells; semiconductor layer; energy conversion; preferably comprises; material selected; material preferably; transient n-type; p-type semiconductor; vacuum deposited; resistivity n-type; resistivity region; ternary materials; thin-film heterojunction; juxtaposed regions; light-to-electrical energy; junction solar; chalcopyrite ternary; film heterojunction; elemental constituents; superimposed region; forming thin-film; layer ranging; layer defining; discrete juxtaposed; type heterojunction; homojunction layer; heterojunction formed; improved thin-film; type material; type semiconductor; preferably comprise; /136/148/257/427/438/

Citation Formats

Mickelsen, Reid A, and Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2. United States: N. p., 1982. Web.
Mickelsen, Reid A, & Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2. United States.
Mickelsen, Reid A, and Chen, Wen S. Fri . "Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2". United States. https://www.osti.gov/servlets/purl/864241.
@article{osti_864241,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2},
author = {Mickelsen, Reid A and Chen, Wen S},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}

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