Electromigration process for the purification of molten silicon during crystal growth

Patent · 31 December 1981

OSTI ID:864209

Shlichta, Paul J ^[1]

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1. San Pedro, CA

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

• Research Organization: California Institute of Technology
• Assignee: Lovelace, Alan M. Administrator of National Aeronautics and Space (San Pedro, CA);Shlichta, Paul J. (San Pedro, CA)
• Patent Number(s): US 4330359
• OSTI ID: 864209
• Country of Publication: United States
• Language: English

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