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Title: Method for measuring the drift mobility in doped semiconductors

Abstract

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

Inventors:
 [1]
  1. Princeton, NJ
Publication Date:
Research Org.:
RCA Corp
OSTI Identifier:
864151
Patent Number(s):
US 4319187
Assignee:
RCA Corporation (New York, NY)
DOE Contract Number:  
AC03-78ET21074
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; measuring; drift; mobility; doped; semiconductors; majority; carriers; consists; current; transient; schottky-barrier; device; following; termination; forward; bias; pulse; example; amorphous; silicon; hydrogenated; material; phosphorous; particularly; useful; dielectric; relaxation; time; shorter; carrier; transit; solar; cells; material useful; transit time; amorphous silicon; solar cell; particularly useful; solar cells; material doped; hydrogenated material; relaxation time; drift mobility; majority carriers; /324/136/

Citation Formats

Crandall, Richard S. Method for measuring the drift mobility in doped semiconductors. United States: N. p., 1982. Web.
Crandall, Richard S. Method for measuring the drift mobility in doped semiconductors. United States.
Crandall, Richard S. 1982. "Method for measuring the drift mobility in doped semiconductors". United States. https://www.osti.gov/servlets/purl/864151.
@article{osti_864151,
title = {Method for measuring the drift mobility in doped semiconductors},
author = {Crandall, Richard S},
abstractNote = {A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.},
doi = {},
url = {https://www.osti.gov/biblio/864151}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}