Copper doped polycrystalline silicon solar cell

Patent · Thu Jan 01 00:00:00 EST 1981

OSTI ID:863793

Koliwad, Krishna M ^[1]; Daud, Taher ^[2]

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1. La Canada, CA
2. La Crescenta, CA

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

• Research Organization: California Institute of Technology (CalTech), Pasadena, CA (United States)
• DOE Contract Number: NAS7-100
• Assignee: Lovelace, Alan M. Administrator of National Aeronautics and Space (La Canada, CA);Koliwad, Krishna M. (La Canada, CA);Daud, Taher (La Crescenta, CA)
• Patent Number(s): US 4249957
• OSTI ID: 863793
• Country of Publication: United States
• Language: English

Related Subjects

copper
doped
polycrystalline
silicon
solar
cell
photovoltaic
cells
improved
performance
fabricated
containing
segregated
grain
boundaries
improved performance
photovoltaic cells
grain boundaries
solar cell
silicon solar
polycrystalline silicon
crystalline silicon
photovoltaic cell
silicon containing
cell photovoltaic
containing copper
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