Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Patent · Tue Jan 01 00:00:00 EST 1980

OSTI ID:863565

Carlson, David E ^[1]

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1. Yardley, PA

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

• Research Organization: RCA Labs., Princeton, NJ (USA)
• DOE Contract Number: EY-76-C-03-1286
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4200473
• OSTI ID: 863565
• Country of Publication: United States
• Language: English

Related Subjects

amorphous
silicon
schottky
barrier
solar
cells
incorporating
insulating
layer
doped
incorporate
adjacent
junction
forming
metal
exhibit
increased
circuit
voltages
compared
standard
rectifying
devices
mis
silicon device
forming metal
barrier solar
circuit voltage
schottky barrier
metal layer
amorphous silicon
solar cell
solar cells
insulating layer
silicon devices
doped layer
rectifying junction
exhibit increased
layer adjacent
silicon schottky
cells incorporating
junction forming
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