Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer
Patent
·
OSTI ID:863533
- Morris Plains, NJ
- New Providence, NJ
Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.
- Research Organization:
- Exxon Research and Engineering Co., Linden, N.J. (USA)
- Assignee:
- Exxon Research & Engineering Co. (Florham Park, NJ)
- Patent Number(s):
- US 4193821
- OSTI ID:
- 863533
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/438/136/257/427/428/
250
300
400
below
boiling
boiling below
cells
degree
deposition
efficient
ester
fabrication
grown
heated substrate
heating
heterojunction
heterojunction solar
highly
highly efficient
improved
insulating
insulating layer
junction solar
layer
layer thereon
naturally
organic
oxide
oxide deposition
oxide layer
oxide-silicon
oxide-silicon heterojunction
preferably
prepared
provide
range
rate temperature
silicon
silicon oxide
silicon substrate
so-heated
solar
solar cell
solar cells
solution
spraying
substrate
substrate temperature
temperature
tetrachloride
thereafter
thereon
250
300
400
below
boiling
boiling below
cells
degree
deposition
efficient
ester
fabrication
grown
heated substrate
heating
heterojunction
heterojunction solar
highly
highly efficient
improved
insulating
insulating layer
junction solar
layer
layer thereon
naturally
organic
oxide
oxide deposition
oxide layer
oxide-silicon
oxide-silicon heterojunction
preferably
prepared
provide
range
rate temperature
silicon
silicon oxide
silicon substrate
so-heated
solar
solar cell
solar cells
solution
spraying
substrate
substrate temperature
temperature
tetrachloride
thereafter
thereon