Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

Patent · Tue Jan 01 00:00:00 EST 1980

OSTI ID:863533

Feng, Tom ^[1]; Ghosh, Amal K ^[2]

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1. Morris Plains, NJ
2. New Providence, NJ

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

• Research Organization: Exxon Research and Engineering Co., Linden, N.J. (USA)
• DOE Contract Number: EY-76-C-03-1283
• Assignee: Exxon Research & Engineering Co. (Florham Park, NJ)
• Patent Number(s): US 4193821
• OSTI ID: 863533
• Country of Publication: United States
• Language: English

Related Subjects

fabrication
heterojunction
solar
cells
improved
oxide
deposition
insulating
layer
highly
efficient
oxide-silicon
prepared
heating
silicon
substrate
thereon
provide
temperature
range
300
degree
400
thereafter
spraying
so-heated
solution
tetrachloride
organic
ester
boiling
below
250
preferably
naturally
grown
layer thereon
heterojunction solar
solar cell
solar cells
silicon substrate
oxide layer
silicon oxide
highly efficient
insulating layer
heated substrate
substrate temperature
junction solar
boiling below
rate temperature
oxide-silicon heterojunction
oxide deposition
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