Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

Patent · Mon Jan 01 00:00:00 EST 1979

OSTI ID:863463

Feng, Tom ^[1]; Ghosh, Amal K ^[2]

---

1. Morris Plains, NJ
2. New Providence, NJ

In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

• Research Organization: Exxon Research and Engineering Co., Linden, N.J. (USA)
• DOE Contract Number: EY-76-C-03-1283
• Assignee: Exxon Research & Engineering Co. (Florham Park, NJ)
• Patent Number(s): US 4177093
• OSTI ID: 863463
• Country of Publication: United States
• Language: English

Related Subjects

method
fabricating
conducting
oxide-silicon
solar
cells
utilizing
electron
beam
sublimation
deposition
oxide
preparing
indium
heterojunction
subsequent
silicon
engineering
efficiency
resultant
cell
enhanced
depositing
predetermined
favorable
angle
incidence
typically
40
degree
70
preferably
55
65
deposited
government
united
america
rights
pursuant
department
energy
contract
ey-76-c-03-1283
cells utilizing
conducting oxide
subsequent deposition
heterojunction solar
solar cell
electron beam
solar cells
silicon solar
energy contract
junction solar
oxide deposited
oxide-silicon heterojunction
beam sublimation
/438/136/257/423/427/