High temperature electronic gain device

Patent · 01 January 1979

OSTI ID:863282

McCormick, J Byron ^[1]; Depp, Steven W ^[1]; Hamilton, Douglas J ^[2]; Kerwin, William J ^[2]

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1. Los Alamos, NM
2. Tucson, AZ

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4138622
• OSTI ID: 863282
• Country of Publication: United States
• Language: English

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