Polycrystalline silicon semiconducting material by nuclear transmutation doping

Patent · Sun Jan 01 00:00:00 EST 1978

OSTI ID:863237

Cleland, John W ^[1]; Westbrook, Russell D ^[2]; Wood, Richard F ^[2]; Young, Rosa T ^[1]

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1. Knoxville, TN
2. Oak Ridge, TN

A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: W-7405-ENG-26
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4129463
• OSTI ID: 863237
• Country of Publication: United States
• Language: English

Related Subjects

polycrystalline
silicon
semiconducting
material
nuclear
transmutation
doping
ntd
semiconductor
comprising
mean
grain
size
1000
microns
containing
phosphorus
dispersed
uniformly
throughout
boundaries
conducting material
material comprising
grain boundaries
semiconductor material
grain size
polycrystalline silicon
crystalline silicon
nuclear transmutation
semiconducting material
uniformly throughout
dispersed uniformly
/136/148/252/376/438/