Polycrystalline silicon semiconducting material by nuclear transmutation doping
Patent
·
OSTI ID:863237
- Knoxville, TN
- Oak Ridge, TN
A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
- DOE Contract Number:
- W-7405-ENG-26;
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4129463
- OSTI ID:
- 863237
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/136/148/252/376/438/
1000
boundaries
comprising
conducting material
containing
crystalline silicon
dispersed
dispersed uniformly
doping
grain
grain boundaries
grain size
material
material comprising
mean
microns
ntd
nuclear
nuclear transmutation
phosphorus
polycrystalline
polycrystalline silicon
semiconducting
semiconducting material
semiconductor
semiconductor material
silicon
size
throughout
transmutation
uniformly
uniformly throughout
1000
boundaries
comprising
conducting material
containing
crystalline silicon
dispersed
dispersed uniformly
doping
grain
grain boundaries
grain size
material
material comprising
mean
microns
ntd
nuclear
nuclear transmutation
phosphorus
polycrystalline
polycrystalline silicon
semiconducting
semiconducting material
semiconductor
semiconductor material
silicon
size
throughout
transmutation
uniformly
uniformly throughout