Supported plasma sputtering apparatus for high deposition rate over large area

Patent · Sat Jan 01 00:00:00 EST 1977

OSTI ID:862891

Moss, Ronald W ^[1]; Laegreid, Nils ^[1]

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1. Richland, WA

A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

• Research Organization: Battelle Memorial Institute, Columbus, OH (United States)
• DOE Contract Number: AC06-76RL01830
• Assignee: Battelle Memorial Institute (Columbus, OH)
• Patent Number(s): US 4038171
• OSTI ID: 862891
• Country of Publication: United States
• Language: English

Related Subjects

supported
plasma
sputtering
apparatus
deposition
rate
described
shaped
electrical
fields
electron
discharge
region
cathode
anode
sputter
target
substrate
regions
free
externally
applied
magnetic
field
provide
substantially
uniform
wide
shaping
electrodes
separate
shape
density
surrounds
embodiment
form
annular
surrounding
flat
surface
provided
ribbed
upper
shields
portions
exposure
sputtered
material
maintain
stable
operation
embodiments
accomplish
result
anodes
shield
remove
coating
heating
simultaneously
mix
metal
auxiliary
insulator
main
resultant
conductive
radio
frequency
potential
shaped electrical
electron discharge
electrical fields
density plasma
electrical field
discharge region
upper surface
radio frequency
magnetic field
substantially uniform
target surface
deposition rate
applied magnetic
sputtering apparatus
externally applied
stable operation
supported plasma
shaped electric
simultaneously mix
plasma sputtering
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