Temperature cycling vapor deposition HgI.sub.2 crystal growth

Patent · 01 January 1977

OSTI ID:862864

Schieber, Michael M ^[1]; Beinglass, Israel ^[1]; Dishon, Giora ^[1]

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1. Jerusalem, IL

A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

• Research Organization: Hebrew University Of Jerusalem
• Other Award/Contract Number: E(29-1)-1183
• Assignee: United States of America as represented by United States Energy (Washington, DC)
• Patent Number(s): US 4030964
• OSTI ID: 862864
• Country of Publication: United States
• Language: English

Related Subjects

/117/23/118/
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