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Title: Method for fabricating beryllium structures

Abstract

Thin-walled beryllium structures are prepared by plasma spraying a mixture of beryllium powder and about 2500 to 4000 ppm silicon powder onto a suitable substrate, removing the plasma-sprayed body from the substrate and placing it in a sizing die having a coefficient of thermal expansion similar to that of the beryllium, exposing the plasma-sprayed body to a moist atmosphere, outgassing the plasma-sprayed body, and then sintering the plasma-sprayed body in an inert atmosphere to form a dense, low-porosity beryllium structure of the desired thin-wall configuration. The addition of the silicon and the exposure of the plasma-sprayed body to the moist atmosphere greatly facilitate the preparation of the beryllium structure while minimizing the heretofore deleterious problems due to grain growth and grain orientation.

Inventors:
 [1];  [2]
  1. (Kingston, TN)
  2. (Oak Ridge, TN)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
OSTI Identifier:
862776
Patent Number(s):
US 4011076
Assignee:
United States of America as represented by United States Energy (Washington, DC)
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; beryllium; structures; thin-walled; prepared; plasma; spraying; mixture; powder; 2500; 4000; ppm; silicon; suitable; substrate; removing; plasma-sprayed; placing; sizing; die; coefficient; thermal; expansion; similar; exposing; moist; atmosphere; outgassing; sintering; inert; form; dense; low-porosity; structure; desired; thin-wall; configuration; addition; exposure; greatly; facilitate; preparation; minimizing; heretofore; deleterious; due; grain; growth; orientation; silicon powder; plasma spray; thermal expansion; inert atmosphere; plasma spraying; suitable substrate; grain growth; grain orientation; expansion similar; beryllium structure; beryllium structures; /419/420/

Citation Formats

Hovis, Jr., Victor M., and Northcutt, Jr., Walter G. Method for fabricating beryllium structures. United States: N. p., 1977. Web.
Hovis, Jr., Victor M., & Northcutt, Jr., Walter G. Method for fabricating beryllium structures. United States.
Hovis, Jr., Victor M., and Northcutt, Jr., Walter G. Sat . "Method for fabricating beryllium structures". United States. https://www.osti.gov/servlets/purl/862776.
@article{osti_862776,
title = {Method for fabricating beryllium structures},
author = {Hovis, Jr., Victor M. and Northcutt, Jr., Walter G.},
abstractNote = {Thin-walled beryllium structures are prepared by plasma spraying a mixture of beryllium powder and about 2500 to 4000 ppm silicon powder onto a suitable substrate, removing the plasma-sprayed body from the substrate and placing it in a sizing die having a coefficient of thermal expansion similar to that of the beryllium, exposing the plasma-sprayed body to a moist atmosphere, outgassing the plasma-sprayed body, and then sintering the plasma-sprayed body in an inert atmosphere to form a dense, low-porosity beryllium structure of the desired thin-wall configuration. The addition of the silicon and the exposure of the plasma-sprayed body to the moist atmosphere greatly facilitate the preparation of the beryllium structure while minimizing the heretofore deleterious problems due to grain growth and grain orientation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1977},
month = {1}
}

Patent:

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