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Title: Use of Tritium in the Study of defects in Amorphous Silicon

Abstract

Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Laboratory for Laser Energetics, University of Rochester
Sponsoring Org.:
USDOE
OSTI Identifier:
860704
Report Number(s):
DOE/SF/19460-641
1601; 2004-22; TRN: US200721%%397
DOE Contract Number:  
FC52-92SF19460
Resource Type:
Conference
Resource Relation:
Journal Name: Fusion Science and Technology; Journal Volume: 48; Conference: 7th International Conference on Tritium Science and Technology, Baden-Baden, Germany, 12-17 September 2004
Country of Publication:
United States
Language:
English
Subject:
08 HYDROGEN; 14 SOLAR ENERGY; ATOMS; DEFECTS; ENERGY GAP; HYDROGEN; PHYSICAL PROPERTIES; SILICON; SOLAR CELLS; TRITIUM

Citation Formats

Costea, S., Pisana, S., Kherani, N.P., Gaspari, F., Kosteski, T., Shmayda, W.T., and Zukotynski, S. Use of Tritium in the Study of defects in Amorphous Silicon. United States: N. p., 2005. Web.
Costea, S., Pisana, S., Kherani, N.P., Gaspari, F., Kosteski, T., Shmayda, W.T., & Zukotynski, S. Use of Tritium in the Study of defects in Amorphous Silicon. United States.
Costea, S., Pisana, S., Kherani, N.P., Gaspari, F., Kosteski, T., Shmayda, W.T., and Zukotynski, S. Mon . "Use of Tritium in the Study of defects in Amorphous Silicon". United States. doi:.
@article{osti_860704,
title = {Use of Tritium in the Study of defects in Amorphous Silicon},
author = {Costea, S. and Pisana, S. and Kherani, N.P. and Gaspari, F. and Kosteski, T. and Shmayda, W.T. and Zukotynski, S.},
abstractNote = {Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon.},
doi = {},
journal = {Fusion Science and Technology},
number = ,
volume = 48,
place = {United States},
year = {Mon Nov 28 00:00:00 EST 2005},
month = {Mon Nov 28 00:00:00 EST 2005}
}

Conference:
Other availability
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