skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

Abstract

The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
860399
Report Number(s):
NREL/SR-520-38678
ADJ-2-30630-23; TRN: US200524%%139
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Related Information: Work performed by the University of Utah, Salt Lake City, Utah
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 08 HYDROGEN; 14 SOLAR ENERGY; ALLOY SYSTEMS; ALLOYS; CHEMICAL VAPOR DEPOSITION; DEFECTS; DEPOSITION; HYDROGEN; IMPURITIES; OPTICAL PROPERTIES; SILICON; STABILITY; PV; MODULE; AMORPHOUS SILICON; ADVANCED MATERIALS; STAEBLER-WRONSKI EFFECT; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); DEVICES; PHOTOCONDUCTIVITY; Solar Energy - Photovoltaics

Citation Formats

Taylor, P. C. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005. United States: N. p., 2005. Web. doi:10.2172/860399.
Taylor, P. C. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005. United States. doi:10.2172/860399.
Taylor, P. C. Tue . "Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005". United States. doi:10.2172/860399. https://www.osti.gov/servlets/purl/860399.
@article{osti_860399,
title = {Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005},
author = {Taylor, P. C.},
abstractNote = {The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.},
doi = {10.2172/860399},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {11}
}

Technical Report:

Save / Share: