skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005

Abstract

A major effort during this subcontract period has been to evaluate the microcrystalline Si material under development at United Solar Ovonics Corporation (USOC). This material is actually a hydrogenated nanocrystalline form of Si and it will be denoted in this report as nc-Si:H. Second, we continued our studies of the BP Solar high-growth samples. Third, we evaluated amorphous silicon-germanium alloys produced by the hot-wire chemical vapor deposition growth process. This method holds some potential for higher deposition rate Ge alloy materials with good electronic properties. In addition to these three major focus areas, we examined a couple of amorphous germanium (a-Ge:H) samples produced by the ECR method at Iowa State University. Our studies of the electron cyclotron resonance a-Ge:H indicated that the Iowa State a Ge:H material had quite superior electronic properties, both in terms of the drive-level capacitance profiling deduced defect densities, and the transient photocapacitance deduced Urbach energies. Also, we characterized several United Solar a Si:H samples deposited very close to the microcrystalline phase transition. These samples exhibited good electronic properties, with midgap defect densities slightly less than 1 x 1016 cm-3 in the fully light-degraded state.

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
860393
Report Number(s):
NREL/SR-520-38676
ADJ-2-30630-17; TRN: US0504907
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Related Information: Work performed by the University of Oregon, Eugene, Oregon
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS; ALLOYS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DEFECTS; DEPOSITION; ELECTRON CYCLOTRON-RESONANCE; GERMANIUM; IOWA; PERFORMANCE; PHOTOVOLTAIC CELLS; SILICON; STABILITY; TRANSIENTS; PV; MODULE; SOLAR CELL; THIN FILM; AMORPHOUS SILICON; DRIVE-LEVEL CAPACITANCE PROFILING (DLCP); MODULATED PHOTOCURRENT SPECTROSCOPY (MPS); ELECTRONIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE (ECR); HOT-WIRE CHEMICAL VAPOR DEPOSITION; TRANSIENT PHOTOCAPACITANCE (TPC); Solar Energy - Photovoltaics

Citation Formats

Cohen, J. D. Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005. United States: N. p., 2005. Web. doi:10.2172/860393.
Cohen, J. D. Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005. United States. doi:10.2172/860393.
Cohen, J. D. Tue . "Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005". United States. doi:10.2172/860393. https://www.osti.gov/servlets/purl/860393.
@article{osti_860393,
title = {Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005},
author = {Cohen, J. D.},
abstractNote = {A major effort during this subcontract period has been to evaluate the microcrystalline Si material under development at United Solar Ovonics Corporation (USOC). This material is actually a hydrogenated nanocrystalline form of Si and it will be denoted in this report as nc-Si:H. Second, we continued our studies of the BP Solar high-growth samples. Third, we evaluated amorphous silicon-germanium alloys produced by the hot-wire chemical vapor deposition growth process. This method holds some potential for higher deposition rate Ge alloy materials with good electronic properties. In addition to these three major focus areas, we examined a couple of amorphous germanium (a-Ge:H) samples produced by the ECR method at Iowa State University. Our studies of the electron cyclotron resonance a-Ge:H indicated that the Iowa State a Ge:H material had quite superior electronic properties, both in terms of the drive-level capacitance profiling deduced defect densities, and the transient photocapacitance deduced Urbach energies. Also, we characterized several United Solar a Si:H samples deposited very close to the microcrystalline phase transition. These samples exhibited good electronic properties, with midgap defect densities slightly less than 1 x 1016 cm-3 in the fully light-degraded state.},
doi = {10.2172/860393},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Technical Report:

Save / Share: