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Title: The effect of thin film thickness on the incorporation of Mn interstitials in Ga{sub 1-x}Mn{sub x}As

Abstract

We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga{sub 1-x}Mn{sub x}As thin films. We find that the growth surface acts as a sink facilitating the out-diffusion of Mn interstitials (Mn{sub I}), and thus reducing its concentration in the film. The out-diffused Mn{sub I} accumulate on the surface in a surface oxide layer and do not participate in the ferromagnetism of the film. For thin films less than 15 nm thick, no Mn{sub I} can be detected. Because of the absence of compensating Mn{sub I} defects, higher T{sub C} can be achieved for such extremely thin Ga{sub 1-x}Mn{sub x}As layers. These results agree with our previously suggested Fermi-level-governed upper limit of the T{sub C} of III-Mn-V ferromagnetic semiconductors.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Director. Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division; National Science Foundation Grant DMR02-10519, Department of Defense. Defense Advanced Research Projects Agency. SpinS Program (US)
OSTI Identifier:
842113
Report Number(s):
LBNL-56437
R&D Project: 513320; TRN: US200515%%1101
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 86; Other Information: Submitted to Applied Physics Letters: Volume 86; Journal Publication Date: 2005; PBD: 5 Oct 2004
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; DEFECTS; DISTRIBUTION; FERROMAGNETISM; INTERSTITIALS; OXIDES; THICKNESS; THIN FILMS

Citation Formats

Yu, K.M., Walukiewicz, W., Wojtowicz, T., Denlinger, J., Scarpulla, M.A., Liu, X., and Furdyna, J.K. The effect of thin film thickness on the incorporation of Mn interstitials in Ga{sub 1-x}Mn{sub x}As. United States: N. p., 2004. Web.
Yu, K.M., Walukiewicz, W., Wojtowicz, T., Denlinger, J., Scarpulla, M.A., Liu, X., & Furdyna, J.K. The effect of thin film thickness on the incorporation of Mn interstitials in Ga{sub 1-x}Mn{sub x}As. United States.
Yu, K.M., Walukiewicz, W., Wojtowicz, T., Denlinger, J., Scarpulla, M.A., Liu, X., and Furdyna, J.K. Tue . "The effect of thin film thickness on the incorporation of Mn interstitials in Ga{sub 1-x}Mn{sub x}As". United States. https://www.osti.gov/servlets/purl/842113.
@article{osti_842113,
title = {The effect of thin film thickness on the incorporation of Mn interstitials in Ga{sub 1-x}Mn{sub x}As},
author = {Yu, K.M. and Walukiewicz, W. and Wojtowicz, T. and Denlinger, J. and Scarpulla, M.A. and Liu, X. and Furdyna, J.K.},
abstractNote = {We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga{sub 1-x}Mn{sub x}As thin films. We find that the growth surface acts as a sink facilitating the out-diffusion of Mn interstitials (Mn{sub I}), and thus reducing its concentration in the film. The out-diffused Mn{sub I} accumulate on the surface in a surface oxide layer and do not participate in the ferromagnetism of the film. For thin films less than 15 nm thick, no Mn{sub I} can be detected. Because of the absence of compensating Mn{sub I} defects, higher T{sub C} can be achieved for such extremely thin Ga{sub 1-x}Mn{sub x}As layers. These results agree with our previously suggested Fermi-level-governed upper limit of the T{sub C} of III-Mn-V ferromagnetic semiconductors.},
doi = {},
journal = {Applied Physics Letters},
number = ,
volume = 86,
place = {United States},
year = {2004},
month = {10}
}