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Title: Valence band hybridization in N-rich GaN1-xAsx alloys

Abstract

We have used photo-modulated transmission and optical absorption spectroscopies to measure the composition dependence of interband optical transitions in N-rich GaN{sub 1-x}As{sub x} alloys with x up to 0.06. The direct bandgap gradually decreases as x increases. In the dilute x limit, the observed band gap approaches 2.8 eV; this limiting value is attributed to a transition between the As localized level, which has been previously observed in As-doped GaN at 0.6 eV above the valence band maximum in As-doped GaN, and the conduction band minimum. The structure of the valence band of GaN{sub 1-x}As{sub x} is explained by the hybridization of the localized As states with the extended valence band states of GaN matrix. The hybridization is directly confirmed by soft x-ray emission experiments. To describe the electronic structure of the GaN{sub 1-x}As{sub x} alloys in the entire composition range a linear interpolation is used to combine the effects of valence band hybridization in N-rich alloys with conduction band anticrossing in As-rich alloys.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Director. Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division (US)
OSTI Identifier:
835429
Report Number(s):
LBNL-54981
R&D Project: 513360; TRN: US200501%%175
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 7011; Journal Issue: 11; Other Information: Submitted to Physical Review B, Volume 7011, No.11; Journal Publication Date: 09/2004; PBD: 4 May 2004
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ALLOYS; ELECTRONIC STRUCTURE; HYBRIDIZATION; INTERPOLATION; LIMITING VALUES; VALENCE

Citation Formats

Wu, J, Walukiewicz, W, Yu, K M, Denlinger, J D, Shan, W, Ager, III, J W, Kimura, A, Tang, H F, and Kuech, T F. Valence band hybridization in N-rich GaN1-xAsx alloys. United States: N. p., 2004. Web.
Wu, J, Walukiewicz, W, Yu, K M, Denlinger, J D, Shan, W, Ager, III, J W, Kimura, A, Tang, H F, & Kuech, T F. Valence band hybridization in N-rich GaN1-xAsx alloys. United States.
Wu, J, Walukiewicz, W, Yu, K M, Denlinger, J D, Shan, W, Ager, III, J W, Kimura, A, Tang, H F, and Kuech, T F. 2004. "Valence band hybridization in N-rich GaN1-xAsx alloys". United States. https://www.osti.gov/servlets/purl/835429.
@article{osti_835429,
title = {Valence band hybridization in N-rich GaN1-xAsx alloys},
author = {Wu, J and Walukiewicz, W and Yu, K M and Denlinger, J D and Shan, W and Ager, III, J W and Kimura, A and Tang, H F and Kuech, T F},
abstractNote = {We have used photo-modulated transmission and optical absorption spectroscopies to measure the composition dependence of interband optical transitions in N-rich GaN{sub 1-x}As{sub x} alloys with x up to 0.06. The direct bandgap gradually decreases as x increases. In the dilute x limit, the observed band gap approaches 2.8 eV; this limiting value is attributed to a transition between the As localized level, which has been previously observed in As-doped GaN at 0.6 eV above the valence band maximum in As-doped GaN, and the conduction band minimum. The structure of the valence band of GaN{sub 1-x}As{sub x} is explained by the hybridization of the localized As states with the extended valence band states of GaN matrix. The hybridization is directly confirmed by soft x-ray emission experiments. To describe the electronic structure of the GaN{sub 1-x}As{sub x} alloys in the entire composition range a linear interpolation is used to combine the effects of valence band hybridization in N-rich alloys with conduction band anticrossing in As-rich alloys.},
doi = {},
url = {https://www.osti.gov/biblio/835429}, journal = {Physical Review B},
number = 11,
volume = 7011,
place = {United States},
year = {Tue May 04 00:00:00 EDT 2004},
month = {Tue May 04 00:00:00 EDT 2004}
}