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Title: Microtexture of Strain in electroplated copper interconnects

Abstract

The microstructure of narrow metal conductors in the electrical interconnections on IC chips has often been identified as of major importance in the reliability of these devices. The stresses and stress gradients that develop in the conductors as a result of thermal expansion differences in the materials and of electromigration at high current densities are believed to be strongly dependent on the details of the grain structure. The present work discusses new techniques based on microbeam x-ray diffraction (MBXRD) that have enabled measurement not only of the microstructure of totally encapsulated conductors but also of the local stresses in them on a micron and submicron scale. White x-rays from the Advanced Light Source were focused to a micron spot size by Kirkpatrick-Baez mirrors. The sample was stepped under the micro-beam and Laue images obtained at each sample location using a CCD area detector. Microstructure and local strain were deduced from these images. Cu lines with widths ranging from 0.8 mm to 5 mm and thickness of 1 mm were investigated. Comparisons are made between the capabilities of MBXRD and the well established techniques of broad beam XRD, electron back scatter diffraction (EBSD) and focused ion beam imagining (FIB).

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Director. Office of Science. Office of Basic Energy Sciences (US)
OSTI Identifier:
834410
Report Number(s):
LBNL-45243
R&D Project: A580ES; TRN: US0407114
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: Materials Research Society 2000 Spring Meeting, San Francisco, CA (US), 04/27/2000; Other Information: PBD: 1 Apr 2001
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS; ADVANCED LIGHT SOURCE; COPPER; DIFFRACTION; ELECTRONS; ELECTROPHORESIS; ION BEAMS; MICROSTRUCTURE; MIRRORS; RELIABILITY; STRAINS; STRESSES; THERMAL EXPANSION; THICKNESS; X-RAY DIFFRACTION; X-RAY MICRODIFFRACTIOM THIN FILMS ELECTROMIGRATION STRESS

Citation Formats

Spolenak, R., Barr, D.L., Gross, M.E., Evans-Lutterodt, K., Brown, W.L., Tamura, N., MacDowell, A.A., Celestre, R.S., Padmore, H.A., Valek, B.C., Bravman, J.C., Flinn, P., Marieb, T., Keller, R.R., Batterman, B.W., and Patel, J.R.. Microtexture of Strain in electroplated copper interconnects. United States: N. p., 2001. Web.
Spolenak, R., Barr, D.L., Gross, M.E., Evans-Lutterodt, K., Brown, W.L., Tamura, N., MacDowell, A.A., Celestre, R.S., Padmore, H.A., Valek, B.C., Bravman, J.C., Flinn, P., Marieb, T., Keller, R.R., Batterman, B.W., & Patel, J.R.. Microtexture of Strain in electroplated copper interconnects. United States.
Spolenak, R., Barr, D.L., Gross, M.E., Evans-Lutterodt, K., Brown, W.L., Tamura, N., MacDowell, A.A., Celestre, R.S., Padmore, H.A., Valek, B.C., Bravman, J.C., Flinn, P., Marieb, T., Keller, R.R., Batterman, B.W., and Patel, J.R.. Sun . "Microtexture of Strain in electroplated copper interconnects". United States. https://www.osti.gov/servlets/purl/834410.
@article{osti_834410,
title = {Microtexture of Strain in electroplated copper interconnects},
author = {Spolenak, R. and Barr, D.L. and Gross, M.E. and Evans-Lutterodt, K. and Brown, W.L. and Tamura, N. and MacDowell, A.A. and Celestre, R.S. and Padmore, H.A. and Valek, B.C. and Bravman, J.C. and Flinn, P. and Marieb, T. and Keller, R.R. and Batterman, B.W. and Patel, J.R.},
abstractNote = {The microstructure of narrow metal conductors in the electrical interconnections on IC chips has often been identified as of major importance in the reliability of these devices. The stresses and stress gradients that develop in the conductors as a result of thermal expansion differences in the materials and of electromigration at high current densities are believed to be strongly dependent on the details of the grain structure. The present work discusses new techniques based on microbeam x-ray diffraction (MBXRD) that have enabled measurement not only of the microstructure of totally encapsulated conductors but also of the local stresses in them on a micron and submicron scale. White x-rays from the Advanced Light Source were focused to a micron spot size by Kirkpatrick-Baez mirrors. The sample was stepped under the micro-beam and Laue images obtained at each sample location using a CCD area detector. Microstructure and local strain were deduced from these images. Cu lines with widths ranging from 0.8 mm to 5 mm and thickness of 1 mm were investigated. Comparisons are made between the capabilities of MBXRD and the well established techniques of broad beam XRD, electron back scatter diffraction (EBSD) and focused ion beam imagining (FIB).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Apr 01 00:00:00 EST 2001},
month = {Sun Apr 01 00:00:00 EST 2001}
}

Conference:
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