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Title: Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films

Journal Article · · Applied Physics Letters
OSTI ID:833539

No abstract prepared.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE; National Science Foundation. UC-Berkeley Microfabrication Lab and Integrated Materials Laboratory, Air Force Office of Scientific Research (AFOSR/JSEP) under Contract F49620-94-C-0038 (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
833539
Report Number(s):
LBL-37372; APPLAB; TRN: US0406722
Journal Information:
Applied Physics Letters, Vol. 68, Issue 19; Other Information: Journal Publication Date: May 6, 1996; PBD: 1 Jun 1995; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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