Superconducting magnesium diboride films on Si with Tc0~24K grown via vacuum annealing from stoichiometric precursors
Superconducting magnesium diboride films with T{sub c0} {approx} 24 K and sharp transition {approx}1 K were prepared on Si by pulsed-laser deposition from stoichiometric MgB{sub 2} target. Contrary to previous reports, anneals at 630 C and a background of 2 x 10{sup -4} Ar/4%H{sub 2} were performed without the requirement of Mg vapor or Mg cap layer. This integration of superconducting MgB{sub 2} film on Si may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy show that the films have a uniform surface morphology and thickness. Energy-dispersive spectroscopy study reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low T{sub c} for those in situ annealed films, while the use of Si as a substrate does not result in a decrease in T{sub c} as compared to other substrates.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 829194
- Report Number(s):
- P02-112755; APPLAB; TRN: US200610%%677
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 16; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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