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Title: Acceptor ion-implantation in SiC

Authors:
Publication Date:
Research Org.:
ORNL Oak Ridge National Laboratory
Sponsoring Org.:
USDOE
OSTI Identifier:
829148
Report Number(s):
P01-109888
Journal ID: 0168-583X
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Nucl. Instrum. Methods Phys. Res. B
Additional Journal Information:
Journal Volume: 166-167
Country of Publication:
United States
Language:
English

Citation Formats

Handy, E.M. Acceptor ion-implantation in SiC. United States: N. p., 2000. Web. doi:10.1016/S0168-583X(99)00867-8.
Handy, E.M. Acceptor ion-implantation in SiC. United States. doi:10.1016/S0168-583X(99)00867-8.
Handy, E.M. Mon . "Acceptor ion-implantation in SiC". United States. doi:10.1016/S0168-583X(99)00867-8.
@article{osti_829148,
title = {Acceptor ion-implantation in SiC},
author = {Handy, E.M.},
abstractNote = {},
doi = {10.1016/S0168-583X(99)00867-8},
journal = {Nucl. Instrum. Methods Phys. Res. B},
number = ,
volume = 166-167,
place = {United States},
year = {2000},
month = {5}
}