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Title: Formation mechanism of TiN by reaction of tetrakis(dimethylamido)-titanium with plasma-activated nitrogen

Abstract

The metallorganic tetrakis(dimethylamido)-titanium [Ti(NMe{sub 2}){sub 4}] reacts with electron cyclotron resonance plasma-activated nitrogen in the downstream region to form low resistivity crystalline TiN films at substrate temperatures as low as 100 C. The ability to deposit this refractory material at such low temperatures is indicative of a nonthermally activated process. Experiments with labeled nitrogen show that the nitrogen in the TiN films is derived almost exclusively from the plasma gas. Chemical ionization mass spectrometry investigations of the gas mixture in the reactor using labeled nitrogen as the plasma gas reveal the formation of unlabeled amines and what the authors assign to be a three-membered metallacycle intermediate. The results show that the dimethylamido groups are substituted by plasma-activated nitrogen to form pure TiN films. For the first time an almost complete substitution of the ligands on a metallorganic compound using plasma-activated species has been demonstrated.

Authors:
;  [1]; ; ;  [2]
  1. Fraunhofer-Inst. fuer Schicht- und Oberflaechentechnik, Braunschweig (Germany)
  2. AT and T Bell Labs., Murray Hill, NJ (United States)
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
82895
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 142; Journal Issue: 6; Other Information: PBD: Jun 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; TITANIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; TITANIUM COMPOUNDS; NITRIDATION; ORGANOMETALLIC COMPOUNDS; PLASMA HEATING; REACTION INTERMEDIATES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; CHEMICAL REACTION KINETICS

Citation Formats

Weber, A, Klages, C P, Gross, M E, Charatan, R M, and Brown, W L. Formation mechanism of TiN by reaction of tetrakis(dimethylamido)-titanium with plasma-activated nitrogen. United States: N. p., 1995. Web. doi:10.1149/1.2044251.
Weber, A, Klages, C P, Gross, M E, Charatan, R M, & Brown, W L. Formation mechanism of TiN by reaction of tetrakis(dimethylamido)-titanium with plasma-activated nitrogen. United States. https://doi.org/10.1149/1.2044251
Weber, A, Klages, C P, Gross, M E, Charatan, R M, and Brown, W L. Thu . "Formation mechanism of TiN by reaction of tetrakis(dimethylamido)-titanium with plasma-activated nitrogen". United States. https://doi.org/10.1149/1.2044251.
@article{osti_82895,
title = {Formation mechanism of TiN by reaction of tetrakis(dimethylamido)-titanium with plasma-activated nitrogen},
author = {Weber, A and Klages, C P and Gross, M E and Charatan, R M and Brown, W L},
abstractNote = {The metallorganic tetrakis(dimethylamido)-titanium [Ti(NMe{sub 2}){sub 4}] reacts with electron cyclotron resonance plasma-activated nitrogen in the downstream region to form low resistivity crystalline TiN films at substrate temperatures as low as 100 C. The ability to deposit this refractory material at such low temperatures is indicative of a nonthermally activated process. Experiments with labeled nitrogen show that the nitrogen in the TiN films is derived almost exclusively from the plasma gas. Chemical ionization mass spectrometry investigations of the gas mixture in the reactor using labeled nitrogen as the plasma gas reveal the formation of unlabeled amines and what the authors assign to be a three-membered metallacycle intermediate. The results show that the dimethylamido groups are substituted by plasma-activated nitrogen to form pure TiN films. For the first time an almost complete substitution of the ligands on a metallorganic compound using plasma-activated species has been demonstrated.},
doi = {10.1149/1.2044251},
url = {https://www.osti.gov/biblio/82895}, journal = {Journal of the Electrochemical Society},
number = 6,
volume = 142,
place = {United States},
year = {1995},
month = {6}
}