V-shaped inversion domains in InN grown on c-plane sapphire
Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic Energy Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 828734
- Report Number(s):
- LBNL-54953; APPLAB; R&D Project: 513340; TRN: US200427%%660
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 2; Other Information: Journal Publication Date: 07/12/2004; PBD: 27 Apr 2004; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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