Effect of ion bombardment on the structure and properties of PECVD SiO{sub 2}
- Drexel Univ., Philadelphia, PA (United States). Dept. of Chemical Engineering
SiO{sub 2} films were deposited on silicon wafers at 25 C by plasma enhanced decomposition of tetraethoxysilane (TEOS) in a mixture of argon and oxygen. The deposition was performed in a rf-powered (13.56 MHz) asymmetric plasma reactor. The effect of ion bombardment was evaluated by varying the ion energy flux (IEF) at the substrate surface from 0.93 to 9.94 W/cm{sup 2}. On-line optical emission spectra (OES) revealed CO, CH, and H peaks whose absorption intensities increased with increasing applied power. On-line mass spectrometer data showed that the peak intensities of OC{sub 2}H{sub 5}, SiOH (m/e = 45), and HSiOH (m/e = 46) fragments decreased with increasing applied power indicating the decomposition of these species. FTIR spectra of the deposited films showed that the concentrations of Si-OH and trapped CO gases in the film decreased with increasing IEF. Also, the FTIR results and the refractive index measurements indicated that the film density increased as a function of IEF. The stoichiometry of the film did not change when IEF was below 2, but for IEF greater than 4.91 W/cm{sup 2}, the film became Si-rich.
- OSTI ID:
- 82557
- Report Number(s):
- CONF-941144-; ISBN 1-55899-264-2; TRN: IM9533%%14
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Chemical vapor deposition of refractory metals and ceramics III; Gallois, B.M. [ed.] [Stevens Inst. of Tech., Hoboken, NJ (United States)]; Lee, W.Y. [ed.] [Oak Ridge National Lab., TN (United States)]; Pickering, M.A. [ed.] [Morton International, Woburn, MA (United States)]; PB: 297 p.; Materials Research Society symposium proceedings, Volume 363
- Country of Publication:
- United States
- Language:
- English
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