skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Diluted II-VI oxide semiconductors with multiple band gaps

Journal Article · · Physical Review Letters

No abstract prepared.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Director. Office of Science. Basic Energy Sciences. Division of Materials Sciences and Engineering; NSF Graduate Research Fellowship (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
823220
Report Number(s):
LBNL-53472; PRLTAO; R&D Project: 513320; TRN: US200415%%210
Journal Information:
Physical Review Letters, Vol. 9124, Issue 24; Other Information: Journal Publication Date: 12/12/2003; PBD: 23 Jul 2003; ISSN 0031-9007
Country of Publication:
United States
Language:
English

Similar Records

Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
Journal Article · Mon Feb 21 00:00:00 EST 2000 · Physical Review Letters · OSTI ID:823220

Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
Journal Article · Tue Jul 28 00:00:00 EDT 2015 · Semiconductor Science and Technology · OSTI ID:823220

Trends in band gap pressure coefficients in chalcopyrite semiconductors
Journal Article · Tue Sep 01 00:00:00 EDT 1998 · Physical Review B. Condensed Matter and Materials Physics · OSTI ID:823220