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Title: Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction

Abstract

Different Ag/Si(111) systems have been examined using synchrotron x-ray diffraction. Multi-atomic-layer deposition of Ag onto a Si(111)-(7{times}7) surface maintained at room temperature results in an unstrained, (111)-oriented film. The interface shows a Ag-modified (7{times}7) structure which when annealed above 200--250 {degree}C transforms to a (1{times}1) structure. Although this is near the characteristic temperature for formation of the ({radical}3 {times} {radical}3 ){ital R}30{degree} surface reconstruction commonly observed for a monolayer of Ag adsorbed on Si(111), no evidence of this ({radical}3 {times} {radical}3 ){ital R}30{degree} reconstruction was found at the interface. A Ag monolayer ({radical}3 {times} {radical}3) {ital R}30{degree} surface, further covered by multilayer Ag deposition at room temperature, also shows no indication of the ({radical}3 {times} {radical}3) {ital R}30{degree} reconstruction at the interface. This indicates that the actual interface structure may or may not be related to the clean or adsorbed layer structures. The structure of the Ag-Si interface was further characterized by scans of the crystal truncation rods. Both the (7{times}7) interface prepared by room-temperature deposition and the annealed (1{times}1) interface show fairly sharp boundaries. The results suggest some intermixing occurs at the monolayer level for the annealed interface. The structure of the Ag film was also investigated.

Authors:
 [1];  [1];  [1];  [2];  [3];  [4];  [1];  [1]
  1. Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902 (United States)
  2. University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902 (United States)
  3. Department of Physics, National Chiao-Tung University, Hsinchu, Taiwan (Taiwan, Province of China)
  4. Metals and Ceramics Division, Oak Ridge Institute for Science Education, Oak Ridge, Tennessee 37831 (United States)
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
OSTI Identifier:
82242
DOE Contract Number:  
FG02-91ER45439; AC02-76CH00016; AC05-84OR21400
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: PBD: 15 Jul 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILVER; CHEMISORPTION; CRYSTAL STRUCTURE; SILICON; SORPTIVE PROPERTIES; STRAINS; EPITAXY; ANNEALING; X-RAY DIFFRACTION; AMBIENT TEMPERATURE; TEMPERATURE DEPENDENCE; STRESS RELAXATION

Citation Formats

Aburano, R D, Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, Hong, H, Roesler, J M, Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, Chung, K, Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801, Lin, D, Zschack, P, Chen, H, Department of Materials Science Engineering, University of Illinois, Urbana, Illinois 61801, Chiang, T, and Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080. Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction. United States: N. p., 1995. Web. doi:10.1103/PhysRevB.52.1839.
Aburano, R D, Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, Hong, H, Roesler, J M, Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, Chung, K, Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801, Lin, D, Zschack, P, Chen, H, Department of Materials Science Engineering, University of Illinois, Urbana, Illinois 61801, Chiang, T, & Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080. Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction. United States. https://doi.org/10.1103/PhysRevB.52.1839
Aburano, R D, Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, Hong, H, Roesler, J M, Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080, Chung, K, Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801, Lin, D, Zschack, P, Chen, H, Department of Materials Science Engineering, University of Illinois, Urbana, Illinois 61801, Chiang, T, and Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080. 1995. "Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction". United States. https://doi.org/10.1103/PhysRevB.52.1839.
@article{osti_82242,
title = {Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction},
author = {Aburano, R D and Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080 and Hong, H and Roesler, J M and Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080 and Chung, K and Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 and Lin, D and Zschack, P and Chen, H and Department of Materials Science Engineering, University of Illinois, Urbana, Illinois 61801 and Chiang, T and Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080},
abstractNote = {Different Ag/Si(111) systems have been examined using synchrotron x-ray diffraction. Multi-atomic-layer deposition of Ag onto a Si(111)-(7{times}7) surface maintained at room temperature results in an unstrained, (111)-oriented film. The interface shows a Ag-modified (7{times}7) structure which when annealed above 200--250 {degree}C transforms to a (1{times}1) structure. Although this is near the characteristic temperature for formation of the ({radical}3 {times} {radical}3 ){ital R}30{degree} surface reconstruction commonly observed for a monolayer of Ag adsorbed on Si(111), no evidence of this ({radical}3 {times} {radical}3 ){ital R}30{degree} reconstruction was found at the interface. A Ag monolayer ({radical}3 {times} {radical}3) {ital R}30{degree} surface, further covered by multilayer Ag deposition at room temperature, also shows no indication of the ({radical}3 {times} {radical}3) {ital R}30{degree} reconstruction at the interface. This indicates that the actual interface structure may or may not be related to the clean or adsorbed layer structures. The structure of the Ag-Si interface was further characterized by scans of the crystal truncation rods. Both the (7{times}7) interface prepared by room-temperature deposition and the annealed (1{times}1) interface show fairly sharp boundaries. The results suggest some intermixing occurs at the monolayer level for the annealed interface. The structure of the Ag film was also investigated.},
doi = {10.1103/PhysRevB.52.1839},
url = {https://www.osti.gov/biblio/82242}, journal = {Physical Review, B: Condensed Matter},
number = 3,
volume = 52,
place = {United States},
year = {Sat Jul 15 00:00:00 EDT 1995},
month = {Sat Jul 15 00:00:00 EDT 1995}
}