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Title: Picosecond Response of Gallium-Nitride Metal-Semiconductor-Metal Photodetectors

Abstract

OAK-(B204)Metal-semiconductor-metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. The best performance of a device with a feature size of 1 mm showed a 1.4-ps rise time and 3.5-ps full width at half maximum, which represents the fastest ultraviolet GaN photodiode reported to date. The derived electron velocity in GaN was in good agreement with an independent photo-excitation measurement. A comparison with Monte Carlo simulation was made, and slower impulse response observed in a device with a smaller feature size of 0.5 mm was discussed.

Authors:
; ; ;
Publication Date:
Research Org.:
Laboratory for Laser Energetics (US)
Sponsoring Org.:
(US)
OSTI Identifier:
822126
Report Number(s):
DOE/SF-19460-524
1435; 2003-175; TRN: US200412%%510
DOE Contract Number:  
FC03-92SF19460
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 84; Journal Issue: 12; Other Information: Submitted to Applied Physics Letters: Volume 84, No.12; PBD: 22 Mar 2004
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; PERFORMANCE; PHOTODETECTORS; PHOTODIODES; PULSE RISE TIME; COMPUTERIZED SIMULATION; GALLIUM NITRIDES; ULTRAVIOLET RADIATION

Citation Formats

Li, J, Xu, Y, Hsiang, T Y, and Donaldson, W R. Picosecond Response of Gallium-Nitride Metal-Semiconductor-Metal Photodetectors. United States: N. p., 2004. Web. doi:10.1063/1.1688454.
Li, J, Xu, Y, Hsiang, T Y, & Donaldson, W R. Picosecond Response of Gallium-Nitride Metal-Semiconductor-Metal Photodetectors. United States. https://doi.org/10.1063/1.1688454
Li, J, Xu, Y, Hsiang, T Y, and Donaldson, W R. 2004. "Picosecond Response of Gallium-Nitride Metal-Semiconductor-Metal Photodetectors". United States. https://doi.org/10.1063/1.1688454.
@article{osti_822126,
title = {Picosecond Response of Gallium-Nitride Metal-Semiconductor-Metal Photodetectors},
author = {Li, J and Xu, Y and Hsiang, T Y and Donaldson, W R},
abstractNote = {OAK-(B204)Metal-semiconductor-metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. The best performance of a device with a feature size of 1 mm showed a 1.4-ps rise time and 3.5-ps full width at half maximum, which represents the fastest ultraviolet GaN photodiode reported to date. The derived electron velocity in GaN was in good agreement with an independent photo-excitation measurement. A comparison with Monte Carlo simulation was made, and slower impulse response observed in a device with a smaller feature size of 0.5 mm was discussed.},
doi = {10.1063/1.1688454},
url = {https://www.osti.gov/biblio/822126}, journal = {Applied Physics Letters},
number = 12,
volume = 84,
place = {United States},
year = {Mon Mar 22 00:00:00 EST 2004},
month = {Mon Mar 22 00:00:00 EST 2004}
}