Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices

Technical Report · Thu Sep 19 00:00:00 EDT 2002

DOI:https://doi.org/10.2172/821862· OSTI ID:821862

Wang, C A; Vineis, C J; Choi, H K; Connors, M K; Huang, R H; Daielson, L R; Nichols, G; Charache, G W; Donetsky, D; Anikeef, S; Belenky, G

High-performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open-circuit voltage within about 15% of the limit can be routinely fabricated. To achieve further improvements in TPV device performance, detailed materials studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime, along with device structure considerations are reported. This paper discusses the materials and device issues, and their implications on TPV device performance. In addition, improvements in TPV performance with integrated distributed Bragg reflectors and back-surface reflectors are discussed.

• Research Organization: Lockheed Martin Corporation, Schenectady, NY 12301 (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC12-00SN39357
• OSTI ID: 821862
• Report Number(s): LM-02K092; TRN: US200411%%757
• Resource Relation: Other Information: PBD: 19 Sep 2002
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CARRIER LIFETIME
FILL FACTORS
MICROSTRUCTURE
PERFORMANCE
QUANTUM EFFICIENCY