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Title: Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique

Abstract

Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0.4 has been grown for the first time using a self-solute feeding method. A balance between the growth rate and the spacing between the solute and the growth interface has been found to be crucial in maintaining uniform alloy composition.

Authors:
; ; ;
Publication Date:
Research Org.:
Lockheed Martin Corporation, Schenectady, NY 12301 (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
821861
Report Number(s):
LM-02K074
TRN: US200411%%756
DOE Contract Number:
AC12-00SN39357
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 29 Aug 2003
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ALLOYS; FEEDING; SOLUTES

Citation Formats

P.S. Dutta, G. Rajagopalan, R.J. Gutmann, and G. Nichols. Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique. United States: N. p., 2003. Web. doi:10.2172/821861.
P.S. Dutta, G. Rajagopalan, R.J. Gutmann, & G. Nichols. Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique. United States. doi:10.2172/821861.
P.S. Dutta, G. Rajagopalan, R.J. Gutmann, and G. Nichols. Fri . "Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique". United States. doi:10.2172/821861. https://www.osti.gov/servlets/purl/821861.
@article{osti_821861,
title = {Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique},
author = {P.S. Dutta and G. Rajagopalan and R.J. Gutmann and G. Nichols},
abstractNote = {Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0.4 has been grown for the first time using a self-solute feeding method. A balance between the growth rate and the spacing between the solute and the growth interface has been found to be crucial in maintaining uniform alloy composition.},
doi = {10.2172/821861},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 29 00:00:00 EDT 2003},
month = {Fri Aug 29 00:00:00 EDT 2003}
}

Technical Report:

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  • Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5--0.7 eV) III-V semiconductors. The use of mixed pseudo-binary compounds allows for the tailoring of the lattice parameter and the bandgap of the material. Conventional deposition techniques (i.e., epitaxy) for producing such ternary or quaternary materials are typically slow and expensive. Production of bulk single crystals of ternary materials, for example Ga{sub 1{minus}x}In{sub x}Sb, is expected to dramatically reduce such material costs. Bulk single crystals of Ga{sub 1{minus}x}In{sub x}Sb have been prepared using a Bridgman technique in a two-zone furnace. These crystals are 19 mmmore » in diameter by approximately 50 mm long and were produced using seeds of the same diameter. The effects of growth rate and starting materials on the composition and quality of these crystals will be discussed and compared with other attempts to produce single crystals of this material.« less
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  • Compositionally graded single crystalline <100> seed of Ga{sub 1-x}In{sub x}Sb has been grown in a single experiment using a solute diffusion method. The present technique is simple and less time consuming compared to the conventional boot-strapping approach previously used for generating ternary seeds. Starting from an InSb <100> single crystalline seed, a seed of Ga{sub 0.6}In{sub 0.4}Sb has been grown. The effect of temperature gradient on the crystalline quality of seeds grown using this method has been discussed.
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