Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance
This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.
- Research Organization:
- Lockheed Martin Corporation, Schenectady, NY 12301 (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC12-00SN39357
- OSTI ID:
- 821703
- Report Number(s):
- LM-02K065; TRN: US200411%%685
- Resource Relation:
- Other Information: PBD: 12 Aug 2002
- Country of Publication:
- United States
- Language:
- English
Similar Records
GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding
Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices
Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices
Technical Report
·
Wed Dec 18 00:00:00 EST 2002
·
OSTI ID:821703
+7 more
Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices
Technical Report
·
Mon Jun 16 00:00:00 EDT 2003
·
OSTI ID:821703
+9 more
Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices
Technical Report
·
Tue May 11 00:00:00 EDT 2004
·
OSTI ID:821703
+2 more