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Title: Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance

Abstract

This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lockheed Martin Corporation, Schenectady, NY 12301 (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
821703
Report Number(s):
LM-02K065
TRN: US200411%%685
DOE Contract Number:  
AC12-00SN39357
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 12 Aug 2002
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ABSORPTION; BONDING; DIELECTRIC MATERIALS; PERFORMANCE; SUBSTRATES

Citation Formats

C.A. Wang, P.G. Murphy, P.W. O'Brien, D.A. Shiau, A.C. Anderson, Z.L. Liau, D.M. Depoy, and G. Nichols. Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance. United States: N. p., 2002. Web. doi:10.2172/821703.
C.A. Wang, P.G. Murphy, P.W. O'Brien, D.A. Shiau, A.C. Anderson, Z.L. Liau, D.M. Depoy, & G. Nichols. Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance. United States. doi:10.2172/821703.
C.A. Wang, P.G. Murphy, P.W. O'Brien, D.A. Shiau, A.C. Anderson, Z.L. Liau, D.M. Depoy, and G. Nichols. Mon . "Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance". United States. doi:10.2172/821703. https://www.osti.gov/servlets/purl/821703.
@article{osti_821703,
title = {Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance},
author = {C.A. Wang and P.G. Murphy and P.W. O'Brien and D.A. Shiau and A.C. Anderson and Z.L. Liau and D.M. Depoy and G. Nichols},
abstractNote = {This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.},
doi = {10.2172/821703},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 12 00:00:00 EDT 2002},
month = {Mon Aug 12 00:00:00 EDT 2002}
}

Technical Report:

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