Diffuse X-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon
Ion implantation followed by laser melting has been used to create supersaturated and electrically active concentrations of antimony in silicon. Upon subsequent thermal annealing, however, these metastable dopants deactivate towards the equilibrium solubility limit. In this work, the formation of inactive antimony structures has been studied with grazing angle, diffuse x-ray scattering and transmission electron microscopy and the results are correlated to previous high-resolution x-ray diffraction data. We find that at a concentration of 6.0x1020 cm-3, small, incoherent clusters of radius 3 4 Angstrom form during annealing at 900 C. At a higher concentration of 2.2x1021 cm-3, deactivation at 600 C occurs through the formation of small, antimony aggregates and antimony precipitates. The size of these precipitates from diffuse x-ray scattering is roughly 15 Angstrom in radius for anneal times from 15 to 180 seconds. This value is consistent with the features observed in high-resolution a nd mass contrast transmission electron microscopy images. The coherent nature of the aggregates and precipitates causes the expansion of the surrounding silicon matrix as the deactivation progresses. In addition, the sensitivity of the diffuse x-ray scattering technique has allowed us to detect the presence of small clusters of radius approximately 2 Angstrom in unprocessed Czochralski silicon wafers. These defects are not observed in floating zone silicon wafers, and are tentatively attributed to thermal donors.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 821655
- Report Number(s):
- LBNL-54624; JAPIAU; TRN: US200411%%454
- Journal Information:
- Journal of Applied Physics, Vol. 95, Issue 8; Other Information: Journal Publication Date: 15 April 2004; PBD: 18 Dec 2003; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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