Mesoscale X-ray diffraction measurement of stress relaxation associated with buckling in compressed thin films
Compressed thin films deposited on substrates may buckle depending on the geometrical and mechanical properties of the film/substrate set. Until recently, the small dimensions of the buckling have prevented measurements of their local in plane internal stress distribution. Using a Scanning X-ray Micro diffraction (mSXRD) technique developed at a 3rd generation x-ray synchrotron source, we obtained thin film internal stress maps for circular blisters and telephone chord buckling with micrometric spatial resolution. A fair agreement was found between the film delamination topology observed by optical microscopy and the measured stress maps. We evidenced residual stress relaxation associated with the film buckling: the top is essentially stress-free while adherent region exhibits large compressive stresses.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Basic Energy Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 815420
- Report Number(s):
- LBNL-53307; APPLAB; R&D Project: A580ES; TRN: US0304601
- Journal Information:
- Applied Physics Letters, Vol. 83, Issue 1; Other Information: Journal Publication Date: 2003; PBD: 1 Jul 2003; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Residual stress mapping by micro X-ray diffraction: Application to the study of thin film buckling
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Related Subjects
43 PARTICLE ACCELERATORS
47 OTHER INSTRUMENTATION
DIFFRACTION
DIMENSIONS
DISTRIBUTION
MECHANICAL PROPERTIES
OPTICAL MICROSCOPY
SPATIAL RESOLUTION
STRESS RELAXATION
STRESSES
SUBSTRATES
SYNCHROTRONS
TELEPHONES
THIN FILMS
TOPOLOGY
X-RAY DIFFRACTION
THIN FILM BUCKLING MICRODIFFRACTION MECHANICAL PROPERTIES