skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Particle-in-cell Simulations of Raman Laser Amplification in Preformed Plasmas

Technical Report ·
DOI:https://doi.org/10.2172/814695· OSTI ID:814695

Two critical issues in the amplification of laser pulses by backward Raman scattering in plasma slabs are the saturation mechanism of the amplification effect (which determines the maximum attainable output intensity of a Raman amplifier) and the optimal plasma density for amplification. Previous investigations [V.M. Malkin, et al., Phys. Rev. Lett., 82 (22):4448-4451, 1999] identified forward Raman scattering and modulational instabilities of the amplifying seed as the likely saturation mechanisms and lead to an estimated unfocused output intensities of 10{sup 17}W/cm{sup 2}. The optimal density for amplification is determined by the competing constraints of minimizing the plasma density so as to minimize the growth rate of the instabilities leading to saturation but also maintaining the plasma sufficiently dense that the driven Langmuir wave responsible for backscattering does not break prematurely. Here, particle-in-cell code are simulations presented which verify that saturation of backward Raman amplification does occur at intensities of {approx}10{sup 17}W/cm{sup 2} by forward Raman scattering and modulational instabilities. The optimal density for amplification in a plasma with the representative temperature of T(sub)e = 200 eV is also shown in these simulations to be intermediate between the cold plasma wave-breaking density and the density limit found by assuming a water bag electron distribution function.

Research Organization:
Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)
Sponsoring Organization:
USDOE Office of Science (SC) (US)
DOE Contract Number:
AC02-76CH03073
OSTI ID:
814695
Report Number(s):
PPPL-3830; TRN: US0304314
Resource Relation:
Other Information: PBD: 27 Jun 2003
Country of Publication:
United States
Language:
English