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Title: High rate ECR etching of III-V nitride materials

Abstract

The III-V nitride compound semiconductors are attracting considerable attention for blue and ultraviolet light emitting diodes (LEDs) and lasers as well as high temperature electronics due to their wide band gaps and high dielectric constants. The recent progress observed in the growth of these materials has not been matched by progress in processing techniques to fabricate more highly sophisticated devices. Patterning these materials has been especially difficult due to the relatively inert chemical nature of the group-III nitrides. The authors review dry etch techniques which have been used to pattern these materials including electron cyclotron resonance (ECR), reactive ion etch (RIE), and chemically assisted ion beam etching (CAIBE). ECR etch rates greater than 3,800 {angstrom}/min for InN, 3,500 {angstrom}/min for GaN, and 1,170 A/min for AlN are reported. Etch anisotropy, surface morphology, and near-surface stoichiometry will be discussed.

Authors:
; ;  [1]; ; ;  [2]; ;  [3]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Univ. of Florida, Gainesville, FL (United States)
  3. Auburn Univ., AL (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
81054
Report Number(s):
SAND-94-3244C; CONF-950518-6
ON: DE95013032; TRN: AHC29520%%121
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Resource Relation:
Conference: 187. meeting of the Electrochemical Society, Reno, NV (United States), 21-26 May 1995; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR MATERIALS; ETCHING; SEMICONDUCTOR DEVICES; FABRICATION; INDIUM NITRIDES; GALLIUM NITRIDES; ALUMINIUM NITRIDES; EXPERIMENTAL DATA; PLASMA; ELECTRON CYCLOTRON-RESONANCE; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; STOICHIOMETRY

Citation Formats

Shul, R J, Howard, A J, Kilcoyne, S P, Pearton, S J, Abernathy, C R, Vartuli, C B, Barnes, P A, and Bozack, M J. High rate ECR etching of III-V nitride materials. United States: N. p., 1994. Web. doi:10.2172/81054.
Shul, R J, Howard, A J, Kilcoyne, S P, Pearton, S J, Abernathy, C R, Vartuli, C B, Barnes, P A, & Bozack, M J. High rate ECR etching of III-V nitride materials. United States. https://doi.org/10.2172/81054
Shul, R J, Howard, A J, Kilcoyne, S P, Pearton, S J, Abernathy, C R, Vartuli, C B, Barnes, P A, and Bozack, M J. 1994. "High rate ECR etching of III-V nitride materials". United States. https://doi.org/10.2172/81054. https://www.osti.gov/servlets/purl/81054.
@article{osti_81054,
title = {High rate ECR etching of III-V nitride materials},
author = {Shul, R J and Howard, A J and Kilcoyne, S P and Pearton, S J and Abernathy, C R and Vartuli, C B and Barnes, P A and Bozack, M J},
abstractNote = {The III-V nitride compound semiconductors are attracting considerable attention for blue and ultraviolet light emitting diodes (LEDs) and lasers as well as high temperature electronics due to their wide band gaps and high dielectric constants. The recent progress observed in the growth of these materials has not been matched by progress in processing techniques to fabricate more highly sophisticated devices. Patterning these materials has been especially difficult due to the relatively inert chemical nature of the group-III nitrides. The authors review dry etch techniques which have been used to pattern these materials including electron cyclotron resonance (ECR), reactive ion etch (RIE), and chemically assisted ion beam etching (CAIBE). ECR etch rates greater than 3,800 {angstrom}/min for InN, 3,500 {angstrom}/min for GaN, and 1,170 A/min for AlN are reported. Etch anisotropy, surface morphology, and near-surface stoichiometry will be discussed.},
doi = {10.2172/81054},
url = {https://www.osti.gov/biblio/81054}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Dec 31 00:00:00 EST 1994},
month = {Sat Dec 31 00:00:00 EST 1994}
}