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Title: In-situ observation of atomic self-organization processes in Xe nanocrystals embedded in Al.

Abstract

Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
8101
Report Number(s):
ANL/MSD/CP-93692
TRN: US0101932
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: Fall Meeting of the Materials Research Society, Boston, MA (US), 12/01/1997--12/05/1997; Other Information: PBD: 10 Mar 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON BEAMS; IRRADIATION; STACKING FAULTS; XENON; ALUMINIUM; RADIATION EFFECTS

Citation Formats

Mitsuishi, K., Song, M., Furuya, K., Birtcher, R. C., Allen, C. W., and Donnelly, S. E. In-situ observation of atomic self-organization processes in Xe nanocrystals embedded in Al.. United States: N. p., 1998. Web.
Mitsuishi, K., Song, M., Furuya, K., Birtcher, R. C., Allen, C. W., & Donnelly, S. E. In-situ observation of atomic self-organization processes in Xe nanocrystals embedded in Al.. United States.
Mitsuishi, K., Song, M., Furuya, K., Birtcher, R. C., Allen, C. W., and Donnelly, S. E. Tue . "In-situ observation of atomic self-organization processes in Xe nanocrystals embedded in Al.". United States. https://www.osti.gov/servlets/purl/8101.
@article{osti_8101,
title = {In-situ observation of atomic self-organization processes in Xe nanocrystals embedded in Al.},
author = {Mitsuishi, K. and Song, M. and Furuya, K. and Birtcher, R. C. and Allen, C. W. and Donnelly, S. E.},
abstractNote = {Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {3}
}

Conference:
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