X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.
Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range 925 - 1025 C. From the growth kinetics we obtain an activation energy for interstitial migration in silicon: E{sub 1} = 1.98{+-}0.06eV. The measurements of intensity and size versus time suggest that faults do not shrink and disappear but rather are annihilated by a dislocation reaction mechanism.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 799091
- Report Number(s):
- SLAC-PUB-9244; TRN: US0204804
- Resource Relation:
- Other Information: PBD: 14 Jun 2002
- Country of Publication:
- United States
- Language:
- English
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