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Title: X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.

Abstract

Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range 925 - 1025 C. From the growth kinetics we obtain an activation energy for interstitial migration in silicon: E{sub 1} = 1.98{+-}0.06eV. The measurements of intensity and size versus time suggest that faults do not shrink and disappear but rather are annihilated by a dislocation reaction mechanism.

Authors:
Publication Date:
Research Org.:
Stanford Linear Accelerator Center, Menlo Park, CA (US)
Sponsoring Org.:
USDOE Office of Energy Research (ER) (US)
OSTI Identifier:
799091
Report Number(s):
SLAC-PUB-9244
TRN: US0204804
DOE Contract Number:  
AC03-76SF00515
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 14 Jun 2002
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; ACTIVATION ENERGY; ANNIHILATION; DISLOCATIONS; INTERSTITIALS; KINETICS; REACTION KINETICS; SCATTERING; SILICON; STACKING FAULTS

Citation Formats

Patel, Jamshed R. X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.. United States: N. p., 2002. Web. doi:10.2172/799091.
Patel, Jamshed R. X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.. United States. doi:10.2172/799091.
Patel, Jamshed R. Fri . "X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.". United States. doi:10.2172/799091. https://www.osti.gov/servlets/purl/799091.
@article{osti_799091,
title = {X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.},
author = {Patel, Jamshed R.},
abstractNote = {Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range 925 - 1025 C. From the growth kinetics we obtain an activation energy for interstitial migration in silicon: E{sub 1} = 1.98{+-}0.06eV. The measurements of intensity and size versus time suggest that faults do not shrink and disappear but rather are annihilated by a dislocation reaction mechanism.},
doi = {10.2172/799091},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {6}
}

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