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Title: Radiation tolerance of prototype BTeV pixel detector readout chips

Abstract

High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose up to 87 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been extensively measured.

Authors:
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Energy Research (ER) (US)
OSTI Identifier:
796948
Report Number(s):
FERMILAB-Conf-02/147-E
TRN: US0201593
DOE Contract Number:  
AC02-76CH03000
Resource Type:
Conference
Resource Relation:
Conference: 2002 IEEE Nuclear and Space Radiation Effects Conference, Phoenix, AZ (US), 07/15/2002--07/19/2002; Other Information: PBD: 12 Jul 2002
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CROSS SECTIONS; DESIGN; FERMILAB; IRRADIATION; IU CYCLOTRON; NUCLEAR PHYSICS; PROTON BEAMS; PROTONS; RADIATION EFFECTS; RADIATIONS; SILICON DIODES; TOLERANCE

Citation Formats

Chiodini, Gabriele. Radiation tolerance of prototype BTeV pixel detector readout chips. United States: N. p., 2002. Web.
Chiodini, Gabriele. Radiation tolerance of prototype BTeV pixel detector readout chips. United States.
Chiodini, Gabriele. Fri . "Radiation tolerance of prototype BTeV pixel detector readout chips". United States. https://www.osti.gov/servlets/purl/796948.
@article{osti_796948,
title = {Radiation tolerance of prototype BTeV pixel detector readout chips},
author = {Chiodini, Gabriele},
abstractNote = {High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose up to 87 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been extensively measured.},
doi = {},
url = {https://www.osti.gov/biblio/796948}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {7}
}

Conference:
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