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Title: High-resolution x-ray study of thin GaN film on SiC

Abstract

No abstract prepared.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Org.:
USDOE Office of Energy Research (ER) (US)
OSTI Identifier:
796693
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.
Additional Journal Information:
Journal Volume: 89; Journal Issue: 11; Other Information: PBD: 1 Jun 2001
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; NSLS; PHYSICS; RESOLUTION; FILMS; NATIONAL SYNCHROTRON LIGHT SOURCE

Citation Formats

Kazimirov, A, Faleev, N, Temkin, H, Bedzyk, M, Dmitriev, V, and Melnik, Y. High-resolution x-ray study of thin GaN film on SiC. United States: N. p., 2001. Web. doi:10.1063/1.1364644.
Kazimirov, A, Faleev, N, Temkin, H, Bedzyk, M, Dmitriev, V, & Melnik, Y. High-resolution x-ray study of thin GaN film on SiC. United States. https://doi.org/10.1063/1.1364644
Kazimirov, A, Faleev, N, Temkin, H, Bedzyk, M, Dmitriev, V, and Melnik, Y. 2001. "High-resolution x-ray study of thin GaN film on SiC". United States. https://doi.org/10.1063/1.1364644.
@article{osti_796693,
title = {High-resolution x-ray study of thin GaN film on SiC},
author = {Kazimirov, A and Faleev, N and Temkin, H and Bedzyk, M and Dmitriev, V and Melnik, Y},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.1364644},
url = {https://www.osti.gov/biblio/796693}, journal = {J. Appl. Phys.},
number = 11,
volume = 89,
place = {United States},
year = {Fri Jun 01 00:00:00 EDT 2001},
month = {Fri Jun 01 00:00:00 EDT 2001}
}